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| DDTA (R2-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R2 only B A C TOP VIEW E G H K M BC SOT-523 Dim A B C D N Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 Mechanical Data * * * * * * * * Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.002 grams (approx.) Ordering Information (See Page 2) G H J K L J D L C M N a B P/N DDTA114GE DDTA124GE DDTA144GE DDTA115GE R2 (NOM) 10KW 22KW 47KW 100KW MARKING P26 P27 P28 P29 R2 E SCHEMATIC DIAGRAM All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd RqJA Tj, TSTG Value -50 -50 -5 -100 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. DS30320 Rev. 2 - 2 1 of 3 DDTA (R2-ONLY SERIES) E Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO Min -50 -50 5 3/4 -300 -140 -65 -30 3/4 30 56 68 82 -30 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 250 Max 3/4 3/4 3/4 -0.5 -580 -260 -130 -58 -0.3 3/4 +30 3/4 Unit V V V mA mA V 3/4 % MHz IC = -1mA IE = -720mA, DDTA114GE IE = -330mA, DDTA124GE IE = -160mA, DDTA144GE IE = -72mA, DDTA115GE VCB = -50V VEB = -4V IC = -10mA, IB = -0.5mA IC = -5mA, VCE = -5V 3/4 VCE = -10V, IE = 5mA, f = 100MHz Test Condition IC = -50mA NEW PRODUCT Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DDTA114GE DDTA124GE DDTA144GE DDTA115GE DDTA114GE DDTA124GE DDTA144GE DDTA115GE IEBO VCE(sat) hFE DR2 fT Collector-Emitter Saturation Voltage DC Current Transfer Ratio Bleeder Resistor (R2) Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only Ordering Information (Note 2) Device DDTA114GE-7 DDTA124GE-7 DDTA144GE-7 DDTA115GE-7 Notes: Packaging SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXYM XXX = Product Type Marking Code (See Page 1, e.g. P26 = DDTA114GE) YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 Oct O 2008 V Nov N 2009 W Dec D DS30320 Rev. 2 - 2 2 of 3 DDTA (R2-ONLY SERIES) E TYPICAL CURVES - DDTA114GE NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 PD, POWER DISSIPATION (mW) 1 IC/IB = 10 200 150 0.1 25C 75C -25C 100 0.01 50 0 -50 0 50 100 150 0.001 0 10 20 30 40 50 TA, AMBIENT TEMPERATURE (C) Fig. 1, Derating Curve 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 12 IE = 0V COB, CAPACITANCE (pF) 10 8 6 4 2 0 75C 100 25C -25C 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 75C 0 5 10 15 20 25 30 100 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 VO = 0.2 1000 IC, COLLECTOR CURRENT (mA) 100 VO = 5V 10 1 0.1 0.01 0.001 -25C 25C Vin, INPUT VOLTAGE (V) 75C -25C 25C 1 0 1 2 3 4 5 6 7 8 9 10 0.1 0 100 200 300 400 500 600 700 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30320 Rev. 2 - 2 3 of 3 DDTA (R2-ONLY SERIES) E |
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